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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor
N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 30 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
CHM8401JPT
CURRENT 7.5 Ampere CURRENT 5 Ampere
FEATURE
* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability.
1
SO-8
4.06 (0.160) 3.70 (0.146)
8
CONSTRUCTION
* N-Channel & P-Channel Enhancement in the package
5.00 (0.197) 4.69 (0.185)
4 5
.51 (0.020) .10 (0.012) 1.27 (0.05)BSC
1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002)
.25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228)
CIRCUIT
8
D1 D1 D2 D2 5
1 4 S1 G1 S2 G2
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol Parameter
TA = 25C unless otherwise noted
N-Channel
P-Channel
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous
30
-30
V V
20
7.3
(Note 3)
20
-5.0
ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
A 30 2000 -55 to 150 -55 to 150 -20 mW C C
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W
2006-02
RATING CHARACTERISTIC CURVES ( CHM8401JPT )
N-Channel Electrical Characteristics T
Symbol Parameter
A
= 25C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = 250 A VDS = 30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
30 1 +100 -100
V A nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A VGS=10V, ID=9A VGS=4.5V, ID=7.4A
1 18 25 16
3 21
V m
30 S
Forward Transconductance
VDS =15V, ID = 9A
SWITCHING CHARACTERISTICS (Note 4)
Qg Qgs Q tr toff tf
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=15V, ID=4.7A VGS=10V V DD= 15V ID = 3.5A , VGS = 10 V RGEN= 6
28 4 7.5 22 34 43 18
35 nC
ton
45 70 90 35 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Drain-Source Diode Forward Current
(Note 1)
2.3 1.2
A V
Drain-Source Diode Forward Voltage IS = 2.3A , VGS = 0 V (Note 2)
RATING CHARACTERISTIC CURVES ( CHM8401JPT )
P-Channel Electrical Characteristics T
Symbol Parameter
A
= 25C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = -250 A VDS = -30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
-30 -1 +100 -100
V A nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = -250 A VGS=-10V, ID=-4.2A VGS=-4.5V, ID=-3.4A
-1 40 65 7
-3 50
V m
75 S
Forward Transconductance
VDS = -15V, ID = -4.2A
SWITCHING CHARACTERISTICS (Note 4)
Qg Qgs Q tr toff tf
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=-15V, ID=-4.2A VGS=-10V V DD= -15V I D = -4.2A , VGS = -10 V RGEN= 6
30 4 7.5 21 23 33 60
36 nC
ton
40 45 65 100 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Drain-Source Diode Forward Current
(Note 1)
-2.3 -1.2
A V
Drain-Source Diode Forward Voltage IS = -2.3A , VGS = 0 V (Note 2)

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